Over the years, graphene has long been regarded as the most promising material, especially for making electronic devices smaller and more efficient. Now, scientists have created a new type of graphene transistor, the processor used to build it will be able to run to 100GHz ultra-high frequency.

This breakthrough in technology comes from the Moscow Institute of Physics (MIPT). The double-layer Bilayer graphene transistors they create not only operate at high frequencies, but also have extremely low voltage and power consumption because of the extremely high energy required for switching Small, unmatched by conventional silicon material transistors.

After the two layers of graphene have been integrated, scientists have discovered a weird feature whose energy distribution is not traditional parabolic but rather like a Mexican hat raised in the middle and closer to the electrons at the "brim" As the density is almost infinite, the result is that only a small voltage needs to be applied. As a result, a large number of electrons start to move at the same time, causing the current on the other side of the energy barrier to change drastically.

As a result, you get the same results as a standard transistor, but at much lower voltages.

In fact, in 2010, IBM has demonstrated a graphene transistor, also claimed to run to 100GHz, do not know how the progress now.

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